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技术资料

MRF183S的技术资料

来源：深圳市兴广富电子有限公司发布时间：2009/4/16 15:49:55 浏览点击数：2734

MRF183S的产品特征：
• Guaranteed Performance at 945 MHz, 28 Volts
      Output Power – 45 Watts PEP
      Power Gain – 11.5 dB
      Efficiency – 33%
      IMD – 28 dBc
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW

MRF183S的技术参数：

Rating	Symbol	Value	Unit
Drain-Source Voltage	V_DSS	65	Vdc
Drain–Gate Voltage (RGS = 1 Meg Ohm)	V_DGR	65	Vdc
Gate-Source Voltage	V_GS	±20	Vdc
Drain Current – Continuous	I_D	5	Adc
Total Device Dissipation @ T_C = 70°C Derate above 70°C	P_D	86 0.67	W W/°C
Storage Temperature Range	T_stg	- 65 to +200	°C
Operating Junction Temperature	T_J	200	°C

MRF183S的产品描述：
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment.