|
型 号
|
厂 家
|
封 装
|
批 号
|
|
K6X1008C2D-GF55
|
Samsung Electronics (SEC)
|
SRAM Chip Async Single 5V 1M-Bit 128K x 8 55ns 32-
|
434
|
|
BAS16
|
NXP Semiconductors
|
DIODE SW 75V 215MA HS SOT23
|
9723
|
|
C1206KRX7R9BB473
|
Phycomp [MP] (Philips Div)
|
CAP 47000PF 50V CERAMIC X7R 1206
|
407
|
|
RC0603FR0722K
|
Phycomp [MP] (Philips Div)
|
res 0603 22k 1%
|
430
|
|
WCR1206-1K2FI
|
Welwyn Components (TT - Welwyn)
|
res 1206
|
339
|
|
WCR1206-7K5F
|
Welwyn Components (TT - Welwyn)
|
res 1206
|
32
|
|
18125C474KAT1A
|
AVX [Kyocera] Corporation
|
cap 10% 50v
|
345
|
|
1812J0500474KXT
|
Syfer Technology
|
mlc cap 470nf 10% 50v
|
217
|
|
TMCRG1A477MTR
|
Hitachi AIC Inc.
|
cap 470 uF 20%
|
23
|
|
BSP106
|
Philips
|
N-channel Enhancement Mode Vertical D-mos Transist
|
9135
|
|
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