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| DS3170资料 | |
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DS3170 PDF Download |
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File Size : 116 KB
Manufacturer:MAX/DALL Description:Notes: 5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30 pF load capacitance. 6. tHZOE, tHZCE, tHZWE, and tHZBE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 7. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, tHZWE is less than tLZWE, and tHZBE is less than tLZBE, for any given device. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. Refer to truth table for further conditions from BHE and BLE. |
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| 1PCS | 100PCS | 1K | 10K | ||
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型 号：DS3170 厂 家：MAX/DALL 封 装： 批 号：0446 数 量：4 说 明：Bid Price |
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运 费： 所在地： 新旧程度： |
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