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| IRF6603TR1资料 | |
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IRF6603TR1 PDF Download |
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File Size : 116 KB
Manufacturer:IR Description:Developed in TIs patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL08x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/Hz (an improvement of 60%). DC improvements include an ensured VICR that includes ground, a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive 50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance general-purpose operational amplifier family. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：IRF6603TR1 厂 家：IR 封 装： 批 号：0404 数 量：970 说 明：Bid Price |
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运 费： 所在地： 新旧程度： |
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| 联系人：刘先生，罗小姐， |
| 电 话：0086-755-83576094, |
| 手 机：0086-(0)13728684091 |
| QQ：2355773149,2355773142,61991728 |
| MSN：franlmk168@live.cn |
| 传 真：86-755-83576061 |
| EMail：sales@xgf-ic.com, kupan_ic@126.com |
| 公司地址： 深圳市龙岗区龙城街道龙翔大道9009号珠江广场A2栋11F |
