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| IRF6619TR1资料 | |
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IRF6619TR1 PDF Download |
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File Size : 116 KB
Manufacturer:IR Description:Each cell consists of an active photodiode and a dummy photodiode, which are respectively connected to the active video line and the dummy video line via a switching transis- tor. Each of the active photodiodes is also connected to the saturation control drain via the saturation control transistor, so that the photodiode blooming can be suppressed by grounding the saturation control gate. Applying a pulse sig- nal to the saturation control gate triggers all reset. (See Aux- iliary functions.) Figure 2 shows the schematic diagram of the photodiode active area. This active area has a PN junction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity but low dark current. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：IRF6619TR1 厂 家：IR 封 装： 批 号：0703 数 量：1008 说 明：Bid Price |
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运 费： 所在地： 新旧程度： |
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| 联系人：刘先生，罗小姐， |
| 电 话：0086-755-83576094, |
| 手 机：0086-(0)13728684091 |
| QQ：2355773149,2355773142,61991728 |
| MSN：franlmk168@live.cn |
| 传 真：86-755-83576061 |
| EMail：sales@xgf-ic.com, kupan_ic@126.com |
| 公司地址： 深圳市龙岗区龙城街道龙翔大道9009号珠江广场A2栋11F |
