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| K6R4008V1D-KI10资料 | |
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K6R4008V1D-KI10 PDF Download |
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File Size : 116 KB
Manufacturer:SAM Description: This advanced TMOS ECFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drainCtoCsource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. |
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| 1PCS | 100PCS | 1K | 10K | ||
| 价 格 | |||||
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型 号：K6R4008V1D-KI10 厂 家：SAM 封 装： 批 号：0640,064 数 量：1675 说 明：Bid Price |
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运 费： 所在地： 新旧程度： |
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| 联系人：刘先生，罗小姐， |
| 电 话：0086-755-83576094, |
| 手 机：0086-(0)13728684091 |
| QQ：2355773149,2355773142,61991728 |
| MSN：franlmk168@live.cn |
| 传 真：86-755-83576061 |
| EMail：sales@xgf-ic.com, kupan_ic@126.com |
| 公司地址： 深圳市龙岗区龙城街道龙翔大道9009号珠江广场A2栋11F |
